smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SB1169A features high forward current transfer ratio h fe which has satisfactory linearity. low collector-emitter saturation voltage v ce(sat). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -1 a peak collector current i cp -2 a collector power dissipation p c 1.3 w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c =-30ma,i b =0 -80 v base to emitter voltage v be v ce =-4v,i c =-1a -1.3 v collector-emitter cutoff curent i ces v ce =-80v,v be = 0 -200 a collector-emitter cutoff curent i ceo v ce =-60v,i b = 0 -300 a emitter-base cutoff current i ebo v eb =-5v,i c =0 -1 ma v ce =-4v,i c = -0.2 a 40 450 v ce =-4v,i c =-1a 15 collector-emitter saturation voltage v ce(sat) i c =-1a,i b = -0.125 a -1 v transition frequency f t v ce =-10v,i c =-0.5a,f=10mhz 40 mhz turn-on time t on 0.5 s storage time t stg 1.2 s fall time t f 0.3 s i c =-1a,i b1 =-50ma,i b2 =50ma, v cc =-50v forward current transfer ratio h fe v h fe classification rank r q p o h fe 40 90 70 150 120 250 200 450 product specification sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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